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FBG04N08ASH

  • image of Single FETs, MOSFETs>FBG04N08ASH
  • image of Single FETs, MOSFETs>FBG04N08ASH
FBG04N08ASH
Single FETs, MOSFETs
EPC Space
GAN FET HEMT 40
Bulk
0
: $396.6775
: 0

1

$396.6775

$396.6775

10

$381.7699

$3,817.6990

image of Single FETs, MOSFETs>FBG04N08ASH
FBG04N08ASH
FBG04N08ASH
Single FETs, MOSFETs
EPC Space
GAN FET HEMT 40
Bulk
0
Product parameter
TYPEDESCRIPTION
MfrEPC Space
Seriese-GaN®
PackageBulk
Product StatusACTIVE
Package / Case4-SMD, No Lead
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Rds On (Max) @ Id, Vgs24mOhm @ 8A, 5V
Vgs(th) (Max) @ Id2.5V @ 2mA
Supplier Device Package4-SMD
Drive Voltage (Max Rds On, Min Rds On)5V
Vgs (Max)+6V, -4V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs2.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds312 pF @ 20 V
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