ALD110900SAL

  • image of FET、MOSFET 阵列>ALD110900SAL
  • image of FET、MOSFET 阵列>ALD110900SAL
ALD110900SAL
FET、MOSFET 阵列
Advanced Linear Devices, Inc.
MOSFET 2N-CH 10
管子
309
: $3.9895
: 309

1

$5.0298

$5.0298

50

$3.9895

$199.4750

100

$3.4138

$341.3800

500

$3.0401

$1,520.0500

1000

$2.5957

$2,595.7000

2000

$2.4442

$4,888.4000

image of FET、MOSFET 阵列>ALD110900SAL
image of FET、MOSFET 阵列>ALD110900SAL
ALD110900SAL
ALD110900SAL
FET、MOSFET 阵列
Advanced Linear Devices, Inc.
MOSFET 2N-CH 10
管子
309
产品参数
PDF(1)
类型描述
制造商Advanced Linear Devices, Inc.
系列EPAD®, Zero Threshold™
包裹管子
产品状态ACTIVE
包装/箱8-SOIC (0.154", 3.90mm Width)
安装类型Surface Mount
配置2 N-Channel (Dual) Matched Pair
工作温度0°C ~ 70°C (TJ)
技术MOSFET (Metal Oxide)
功率 - 最大500mW
漏源电压 (Vdss)10.6V
输入电容 (Ciss)(最大值)@Vds2.5pF @ 5V
Rds On(最大)@Id、Vgs500Ohm @ 4V
Vgs(th)(最大值)@Id20mV @ 1µA
供应商设备包8-SOIC
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