ALD110914PAL

  • image of FET、MOSFET 阵列>ALD110914PAL
  • image of FET、MOSFET 阵列>ALD110914PAL
ALD110914PAL
FET、MOSFET 阵列
Advanced Linear Devices, Inc.
MOSFET 2N-CH 10
管子
0
: $5.3732
: 0

50

$5.3732

$268.6600

image of FET、MOSFET 阵列>ALD110914PAL
image of FET、MOSFET 阵列>ALD110914PAL
ALD110914PAL
ALD110914PAL
FET、MOSFET 阵列
Advanced Linear Devices, Inc.
MOSFET 2N-CH 10
管子
0
产品参数
PDF(1)
类型描述
制造商Advanced Linear Devices, Inc.
系列EPAD®
包裹管子
产品状态ACTIVE
包装/箱8-DIP (0.300", 7.62mm)
安装类型Through Hole
配置2 N-Channel (Dual) Matched Pair
工作温度0°C ~ 70°C (TJ)
技术MOSFET (Metal Oxide)
功率 - 最大500mW
漏源电压 (Vdss)10.6V
电流 - 连续漏极 (Id) @ 25°C12mA, 3mA
输入电容 (Ciss)(最大值)@Vds2.5pF @ 5V
Rds On(最大)@Id、Vgs500Ohm @ 5.4V
Vgs(th)(最大值)@Id1.42V @ 1µA
供应商设备包8-PDIP
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