BY25Q64ESSIG(R)

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  • image of 记忆>BY25Q64ESSIG(R)
BY25Q64ESSIG(R)
记忆
BYTe Semiconductor
64 MBIT, 3.0V (
卷带式 (TR)
3690
: $0.4848
: 3690

1

$0.6666

$0.6666

10

$0.6060

$6.0600

25

$0.5959

$14.8975

50

$0.5959

$29.7950

100

$0.5353

$53.5300

250

$0.5252

$131.3000

500

$0.5151

$257.5500

1000

$0.5050

$505.0000

2000

$0.4848

$969.6000

4000

$0.4646

$1,858.4000

6000

$0.4545

$2,727.0000

10000

$0.4545

$4,545.0000

14000

$0.4444

$6,221.6000

image of 记忆>BY25Q64ESSIG(R)
image of 记忆>BY25Q64ESSIG(R)
BY25Q64ESSIG(R)
BY25Q64ESSIG(R)
记忆
BYTe Semiconductor
64 MBIT, 3.0V (
卷带式 (TR)
3690
产品参数
PDF(1)
类型描述
制造商BYTe Semiconductor
系列-
包裹卷带式 (TR)
产品状态ACTIVE
包装/箱8-SOIC (0.209", 5.30mm Width)
安装类型Surface Mount
内存大小64Mbit
内存类型Non-Volatile
工作温度-40°C ~ 85°C (TA)
电压 - 电源2.7V ~ 3.6V
技术FLASH - NOR (SLC)
时钟频率120 MHz
内存格式FLASH
供应商设备包8-SOP
写入周期时间 - 字、页50µs, 2.4ms
内存接口SPI - Quad I/O
存取时间11.5 ns
记忆组织8M x 8
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