BY25Q80BSMIG(R)

  • image of 记忆>BY25Q80BSMIG(R)
  • image of 记忆>BY25Q80BSMIG(R)
BY25Q80BSMIG(R)
记忆
BYTe Semiconductor
8 MBIT, 3.0V (2
卷带式 (TR)
30000
: $0.1818
: 30000

1

$0.5151

$0.5151

10

$0.4444

$4.4440

25

$0.4141

$10.3525

100

$0.3333

$33.3300

250

$0.3030

$75.7500

500

$0.2626

$131.3000

1000

$0.2020

$202.0000

3000

$0.1818

$545.4000

6000

$0.1717

$1,030.2000

15000

$0.1616

$2,424.0000

30000

$0.1515

$4,545.0000

image of 记忆>BY25Q80BSMIG(R)
image of 记忆>BY25Q80BSMIG(R)
BY25Q80BSMIG(R)
BY25Q80BSMIG(R)
记忆
BYTe Semiconductor
8 MBIT, 3.0V (2
卷带式 (TR)
30000
产品参数
PDF(1)
类型描述
制造商BYTe Semiconductor
系列-
包裹卷带式 (TR)
产品状态ACTIVE
包装/箱8-UFDFN Exposed Pad
安装类型Surface Mount
内存大小8Mbit
内存类型Non-Volatile
工作温度-40°C ~ 85°C (TA)
电压 - 电源2.7V ~ 3.6V
技术FLASH - NOR (SLC)
时钟频率108 MHz
内存格式FLASH
供应商设备包8-USON (2x3)
写入周期时间 - 字、页50µs, 2.4ms
内存接口SPI - Quad I/O, QPI
存取时间7 ns
记忆组织1M x 8
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