G3R75MT12K

  • image of 单 FET、MOSFET>G3R75MT12K
  • image of 单 FET、MOSFET>G3R75MT12K
  • image of 单 FET、MOSFET>G3R75MT12K
  • image of 单 FET、MOSFET>G3R75MT12K
G3R75MT12K
单 FET、MOSFET
GeneSiC Semiconductor
SIC MOSFET N-CH
管子
706
: $10.8777
: 706

1

$10.8777

$10.8777

10

$9.8071

$98.0710

25

$9.4031

$235.0775

100

$8.8375

$883.7500

250

$8.4739

$2,118.4750

500

$8.2214

$4,110.7000

1000

$7.9689

$7,968.9000

image of 单 FET、MOSFET>G3R75MT12K
image of 单 FET、MOSFET>G3R75MT12K
image of 单 FET、MOSFET>G3R75MT12K
G3R75MT12K
G3R75MT12K
单 FET、MOSFET
GeneSiC Semiconductor
SIC MOSFET N-CH
管子
706
产品参数
PDF(1)
类型描述
制造商GeneSiC Semiconductor
系列G3R™
包裹管子
产品状态ACTIVE
包装/箱TO-247-4
安装类型Through Hole
工作温度-55°C ~ 175°C (TJ)
技术SiCFET (Silicon Carbide)
场效应管类型N-Channel
电流 - 连续漏极 (Id) @ 25°C41A (Tc)
Rds On(最大)@Id、Vgs90mOhm @ 20A, 15V
功耗(最大)207W (Tc)
Vgs(th)(最大值)@Id2.69V @ 7.5mA
供应商设备包TO-247-4
驱动电压(最大导通电阻、最小导通电阻)15V
Vgs(最大)+22V, -10V
漏源电压 (Vdss)1200 V
栅极电荷 (Qg)(最大值)@Vgs54 nC @ 15 V
输入电容 (Ciss)(最大值)@Vds1560 pF @ 800 V
captcha

86-13826519287‬

0