IAUCN04S7L005ATMA1

  • image of 单 FET、MOSFET>IAUCN04S7L005ATMA1
  • image of 单 FET、MOSFET>IAUCN04S7L005ATMA1
IAUCN04S7L005ATMA1
单 FET、MOSFET
IR (Infineon Technologies)
MOSFET_(20V 40V
卷带式 (TR)
985
: $1.3029
: 985

1

$2.7068

$2.7068

10

$2.4341

$24.3410

25

$2.2927

$57.3175

100

$1.9897

$198.9700

250

$1.8887

$472.1750

500

$1.6968

$848.4000

1000

$1.4342

$1,434.2000

2500

$1.3534

$3,383.5000

5000

$1.3029

$6,514.5000

image of 单 FET、MOSFET>IAUCN04S7L005ATMA1
image of 单 FET、MOSFET>IAUCN04S7L005ATMA1
IAUCN04S7L005ATMA1
IAUCN04S7L005ATMA1
单 FET、MOSFET
IR (Infineon Technologies)
MOSFET_(20V 40V
卷带式 (TR)
985
产品参数
PDF(1)
类型描述
制造商IR (Infineon Technologies)
系列OptiMOS™ 7
包裹卷带式 (TR)
产品状态ACTIVE
包装/箱8-PowerTDFN
安装类型Surface Mount
工作温度-55°C ~ 175°C (TJ)
技术MOSFET (Metal Oxide)
场效应管类型N-Channel
电流 - 连续漏极 (Id) @ 25°C430A (Tj)
Rds On(最大)@Id、Vgs0.52mOhm @ 88A, 10V
功耗(最大)179W (Tc)
Vgs(th)(最大值)@Id1.8V @ 95µA
供应商设备包PG-TDSON-8-43
年级Automotive
驱动电压(最大导通电阻、最小导通电阻)4.5V, 10V
Vgs(最大)±16V
漏源电压 (Vdss)40 V
栅极电荷 (Qg)(最大值)@Vgs141 nC @ 10 V
输入电容 (Ciss)(最大值)@Vds9415 pF @ 20 V
资质AEC-Q101
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