PJQ2800_R1_00001

  • image of FET、MOSFET 阵列>PJQ2800_R1_00001
  • image of FET、MOSFET 阵列>PJQ2800_R1_00001
PJQ2800_R1_00001
FET、MOSFET 阵列
PANJIT
MOSFET 2N-CH 20
卷带式 (TR)
3000
: $0.5858
: 3000

1

$0.5858

$0.5858

10

$0.5050

$5.0500

100

$0.3535

$35.3500

500

$0.2727

$136.3500

1000

$0.2222

$222.2000

3000

$0.2020

$606.0000

6000

$0.1919

$1,151.4000

9000

$0.1717

$1,545.3000

30000

$0.1717

$5,151.0000

image of FET、MOSFET 阵列>PJQ2800_R1_00001
image of FET、MOSFET 阵列>PJQ2800_R1_00001
PJQ2800_R1_00001
PJQ2800_R1_00001
FET、MOSFET 阵列
PANJIT
MOSFET 2N-CH 20
卷带式 (TR)
3000
产品参数
PDF(1)
类型描述
制造商PANJIT
系列-
包裹卷带式 (TR)
产品状态ACTIVE
包装/箱6-VDFN Exposed Pad
安装类型Surface Mount
配置2 N-Channel (Dual)
工作温度-55°C ~ 150°C (TJ)
技术MOSFET (Metal Oxide)
功率 - 最大1.45W (Ta)
漏源电压 (Vdss)20V
电流 - 连续漏极 (Id) @ 25°C5.2A (Ta)
输入电容 (Ciss)(最大值)@Vds515pF @ 10V
Rds On(最大)@Id、Vgs32mOhm @ 5.2A, 4.5V
栅极电荷 (Qg)(最大值)@Vgs6.3nC @ 4.5V
Vgs(th)(最大值)@Id900mV @ 250µA
供应商设备包DFN2020-6L
captcha

86-13826519287‬

0