PSMN1R5-40YSD/2X

  • image of 单 FET、MOSFET>PSMN1R5-40YSD/2X
  • image of 单 FET、MOSFET>PSMN1R5-40YSD/2X
PSMN1R5-40YSD/2X
单 FET、MOSFET
Nexperia
PSMN1R5-40YSD/S
卷带式 (TR)
0
: $0.8787
: 0

1500

$0.8787

$1,318.0500

3000

$0.8181

$2,454.3000

7500

$0.7878

$5,908.5000

10500

$0.7575

$7,953.7500

image of 单 FET、MOSFET>PSMN1R5-40YSD/2X
image of 单 FET、MOSFET>PSMN1R5-40YSD/2X
PSMN1R5-40YSD/2X
PSMN1R5-40YSD/2X
单 FET、MOSFET
Nexperia
PSMN1R5-40YSD/S
卷带式 (TR)
0
产品参数
PDF(1)
类型描述
制造商Nexperia
系列-
包裹卷带式 (TR)
产品状态ACTIVE
包装/箱SC-100, SOT-669
安装类型Surface Mount
工作温度-55°C ~ 175°C (TJ)
技术MOSFET (Metal Oxide)
场效应管类型N-Channel
电流 - 连续漏极 (Id) @ 25°C240A (Tc)
Rds On(最大)@Id、Vgs1.5mOhm @ 25A, 10V
场效应管特性Schottky Diode (Body)
功耗(最大)238W (Tc)
Vgs(th)(最大值)@Id3.6V @ 1mA
供应商设备包LFPAK56, Power-SO8
驱动电压(最大导通电阻、最小导通电阻)10V
Vgs(最大)±20V
漏源电压 (Vdss)40 V
栅极电荷 (Qg)(最大值)@Vgs99 nC @ 10 V
输入电容 (Ciss)(最大值)@Vds7752 pF @ 20 V
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