SQJB46ELP-T1_GE3

  • image of FET、MOSFET 阵列>SQJB46ELP-T1_GE3
  • image of FET、MOSFET 阵列>SQJB46ELP-T1_GE3
  • image of FET、MOSFET 阵列>SQJB46ELP-T1_GE3
  • image of FET、MOSFET 阵列>SQJB46ELP-T1_GE3
SQJB46ELP-T1_GE3
FET、MOSFET 阵列
Vishay / Siliconix
MOSFET 2N-CH 40
卷带式 (TR)
730
: $1.1817
: 730

1

$1.1817

$1.1817

10

$0.9696

$9.6960

100

$0.7474

$74.7400

500

$0.6363

$318.1500

1000

$0.5151

$515.1000

3000

$0.4848

$1,454.4000

6000

$0.4646

$2,787.6000

9000

$0.4444

$3,999.6000

image of FET、MOSFET 阵列>SQJB46ELP-T1_GE3
image of FET、MOSFET 阵列>SQJB46ELP-T1_GE3
image of FET、MOSFET 阵列>SQJB46ELP-T1_GE3
SQJB46ELP-T1_GE3
SQJB46ELP-T1_GE3
FET、MOSFET 阵列
Vishay / Siliconix
MOSFET 2N-CH 40
卷带式 (TR)
730
产品参数
PDF(1)
类型描述
制造商Vishay / Siliconix
系列TrenchFET®
包裹卷带式 (TR)
产品状态ACTIVE
包装/箱PowerPAK® SO-8 Dual
安装类型Surface Mount
配置2 N-Channel
工作温度-55°C ~ 175°C (TJ)
技术MOSFET (Metal Oxide)
功率 - 最大34W (Tc)
漏源电压 (Vdss)40V
电流 - 连续漏极 (Id) @ 25°C30A (Tc)
输入电容 (Ciss)(最大值)@Vds2100pF @ 25V
Rds On(最大)@Id、Vgs8mOhm @ 8A, 10V
栅极电荷 (Qg)(最大值)@Vgs40nC @ 10V
Vgs(th)(最大值)@Id2.2V @ 250µA
供应商设备包PowerPAK® SO-8 Dual
年级Automotive
资质AEC-Q101
captcha

86-13826519287‬

0