SSM6N24TU,LF

  • image of FET、MOSFET 阵列>SSM6N24TU,LF
  • image of FET、MOSFET 阵列>SSM6N24TU,LF
SSM6N24TU,LF
FET、MOSFET 阵列
Toshiba Electronic Devices and Storage Corporation
MOSFET 2N-CH 30
卷带式 (TR)
2565
: $0.4343
: 2565

1

$0.4343

$0.4343

10

$0.3434

$3.4340

100

$0.2020

$20.2000

500

$0.1919

$95.9500

1000

$0.1313

$131.3000

3000

$0.1212

$363.6000

6000

$0.1111

$666.6000

9000

$0.1010

$909.0000

30000

$0.1010

$3,030.0000

75000

$0.0909

$6,817.5000

image of FET、MOSFET 阵列>SSM6N24TU,LF
image of FET、MOSFET 阵列>SSM6N24TU,LF
SSM6N24TU,LF
SSM6N24TU,LF
FET、MOSFET 阵列
Toshiba Electronic Devices and Storage Corporation
MOSFET 2N-CH 30
卷带式 (TR)
2565
产品参数
PDF(1)
类型描述
制造商Toshiba Electronic Devices and Storage Corporation
系列U-MOSIII
包裹卷带式 (TR)
产品状态ACTIVE
包装/箱6-SMD, Flat Leads
安装类型Surface Mount
配置2 N-Channel (Dual)
工作温度150°C
技术MOSFET (Metal Oxide)
功率 - 最大500mW (Ta)
漏源电压 (Vdss)30V
电流 - 连续漏极 (Id) @ 25°C500mA (Ta)
输入电容 (Ciss)(最大值)@Vds245pF @ 10V
Rds On(最大)@Id、Vgs145mOhm @ 500mA, 4.5V
Vgs(th)(最大值)@Id1.1V @ 100µA
供应商设备包UF6
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