TP65H480G4JSGB-TR

  • image of 单 FET、MOSFET>TP65H480G4JSGB-TR
  • image of 单 FET、MOSFET>TP65H480G4JSGB-TR
TP65H480G4JSGB-TR
单 FET、MOSFET
Transphorm
GANFET N-CH 650
卷带式 (TR)
3926
: $1.3332
: 3926

1

$2.9492

$2.9492

10

$2.4543

$24.5430

100

$1.9493

$194.9300

500

$1.6463

$823.1500

1000

$1.4039

$1,403.9000

2000

$1.3332

$2,666.4000

4000

$1.3332

$5,332.8000

image of 单 FET、MOSFET>TP65H480G4JSGB-TR
image of 单 FET、MOSFET>TP65H480G4JSGB-TR
TP65H480G4JSGB-TR
TP65H480G4JSGB-TR
单 FET、MOSFET
Transphorm
GANFET N-CH 650
卷带式 (TR)
3926
产品参数
PDF(1)
类型描述
制造商Transphorm
系列SuperGaN®
包裹卷带式 (TR)
产品状态ACTIVE
包装/箱8-PowerTDFN
安装类型Surface Mount
工作温度-55°C ~ 150°C (TJ)
技术GaNFET (Gallium Nitride)
场效应管类型N-Channel
电流 - 连续漏极 (Id) @ 25°C3.6A (Tc)
Rds On(最大)@Id、Vgs560mOhm @ 3A, 6V
功耗(最大)13.2W (Tc)
Vgs(th)(最大值)@Id2.8V @ 500µA
供应商设备包8-PQFN (5x6)
驱动电压(最大导通电阻、最小导通电阻)6V
Vgs(最大)±10V
漏源电压 (Vdss)650 V
栅极电荷 (Qg)(最大值)@Vgs5 nC @ 10 V
输入电容 (Ciss)(最大值)@Vds414 pF @ 400 V
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